How to clean post-CMP wafers without attacking Cu/W interconnect?
The key is a mild-alkaline window plus metal-ion capture — overly strong alkali or overly strong complexing attacks copper. PCMP-100 runs at pH 9.0–9.8 with acceptance targets of <0.1 particles/cm² (≥0.16 μm) and Na/Cu/Fe < 10 ppb.
1What post-CMP leaves behind
Slurry abrasive particles (SiO₂/CeO₂ colloids, 30–150 nm), metal ions from polishing by-products (Cu²⁺/W/Ta) and the slurry's organic additive film all remain on the wafer and become defect sources in downstream deposition and lithography.
2Why not strong alkali
The difficulty is cleaning thoroughly without attacking Cu/W: both overly strong alkali and overly strong complexing attack copper. PCMP-100 uses a mild-alkaline window (pH 9.0–9.8 at 1:4) with ion-control components that capture Cu²⁺/Fe³⁺ into the liquid phase and dispersing components that stop abrasive re-deposition.
3Parameters and acceptance targets
Use at 1:4 (supplied as 5X concentrate); 40–55 °C; 5–10 min depending on contamination; megasonic or spray; foam height <50 mm (Ross-Miles, 1% solution) for spray safety; 0.2 μm final filtration. Targets: <0.1 particles/cm² (≥0.16 μm) after cleaning and Na/Cu/Fe < 10 ppb after rinsing. Rinse completely in 2–3 cycles.
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