Domestic alternative for post-thinning wafer cleaning
TW-100, an SC1-improved system, suits post-thinning cleaning: two-component 5X concentrate at A:B:DI = 1:1:5 mixed fresh, 40–60 °C for 5–10 min, with targets of <100 particles/wafer (≥0.3 μm) and Fe/Cu/Zn < 10 ppb.
1Three contaminant classes after thinning
Abrasive particles (SiC/diamond/Al₂O₃ debris); metal contamination (Fe/Cu/Zn from platens, carriers, blades); organics (coolant, grinding wax). Thinner wafers leave less thermal budget, so cleaning power and wafer safety must be balanced.
2Trade-offs of the SC1-improved route
TW-100 is a low-alkali SC1 improvement where oxidation and alkaline conditions jointly lift particles and capture metal ions, safer for thin wafers and low-k dielectrics than conventional hot strong alkali. Engineering points: two-component fresh mixing, 4–8 h bath life, mixing exotherm ≤10 °C from 25 °C, and <10% active-oxygen loss at 4 h.
3Parameters and acceptance
Ratio A:B:DI = 1:1:5; 40–60 °C; 5–10 min by spray or megasonic; foam <50 mm; targets: <100 particles/wafer (≥0.3 μm), Fe/Cu/Zn < 10 ppb, and AFM Ra no worse than pre-clean.
Need technical support or a sample?
Tell us your substrate, contamination and process conditions — our process engineers will recommend a grade and arrange sample validation.
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- Songshan Lake, Dongguan, Guangdong, China