Cu-Mo1
Cu-Mo1 Mo/Al Wiring Etchant for Copper-Process 4K2K Panels
Etches Mo/Al wiring in copper-process TFT-LCD lines for 4K2K panels; blended-acid mainstream route balancing etch rate and line profile.
Technical Description
Cu-Mo1 is a blended-acid wiring etchant from Shengpu Chemical for Mo barrier and Al wiring in copper-process TFT-LCD lines serving 4K2K large panels. Benchmarked against Daxin and Parker Mo/Al wiring etchants, it is the industry's absolute mainstream blended-acid route, balancing etch rate and linewidth profile with uniform large-area etching. Processed by immersion or spray at 38–42°C with Al/Mo rate-ratio calibration on customer coupons, side etch below 0.5 µm and thorough rinsing to prevent white frost, it supports the fine-line wiring yields of advanced large-format display lines.
Introduction
Cu-Mo1 Mo/Al Wiring Etchant for Copper-Process 4K2K Panels (Cu-Mo1) is developed by SEMPURION for Panel copper-process wiring as a Etching / Thinning product.Key advantage: Etches Mo/Al wiring in copper-process TFT-LCD lines for 4K2K panels; blended-acid mainstream route balancing etch rate and line profile.. Benchmarked against Daxin / Parker Mo/Al wiring etchants. Key features: Blended-acid etch solution — the absolute mainstream route for TFT-LCD Mo/Al wiring etching, balancing etch rate and linewidth profile while ensuring uniformity over large areas; targets Mo barrier and Al wiring in copper-process 4K2K large panels; Al/Mo etch-rate ratio can be calibrated on customer test coupons (prototype measurement item). Typical process: Immersion or spray at 38–42°C for 60–120 s; at 40°C: Al 150–300 nm/min, Mo 120–250 nm/min (target rate ratio 0.8–1.2 pending measurement); pure-water overflow rinse 5 min to remove residual salts (prevents surface white frost); strip resist; side etch <0.5 µm; evaluate etch loss on any exposed ITO nearby; treat Al/Mo waste liquor compliantly.
Quick Specs
Features
Blended-acid etch solution — the absolute mainstream route for TFT-LCD Mo/Al wiring etching, balancing etch rate and linewidth profile while ensuring uniformity over large areas; targets Mo barrier and Al wiring in copper-process 4K2K large panels; Al/Mo etch-rate ratio can be calibrated on customer test coupons (prototype measurement item)
Process & Usage
Immersion or spray at 38–42°C for 60–120 s; at 40°C: Al 150–300 nm/min, Mo 120–250 nm/min (target rate ratio 0.8–1.2 pending measurement); pure-water overflow rinse 5 min to remove residual salts (prevents surface white frost); strip resist; side etch <0.5 µm; evaluate etch loss on any exposed ITO nearby; treat Al/Mo waste liquor compliantly
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- Phone
- +86 769-82786068
- sales@sempurion.com
- Website
- www.sempurion.com
- Address
- Songshan Lake, Dongguan, Guangdong, China