ET-W Tungsten / TiW Etchant
Semiconductor & PackagingEtching / Developing

ET-W

ET-W Tungsten / TiW Etchant

W/TiW etching for advanced packaging metallization; cyanide-free alkaline chemistry with stable supply chain.

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Technical Description

ET-W is an alkaline tungsten/titanium-tungsten etchant from Shengpu Chemical for advanced packaging metallization. Benchmarked against Tianhong, it uses an alkaline medium that gives the optimum environment for dissolving tungsten as tungstate and is completely cyanide-free, eliminating the toxicity and waste-treatment burdens of traditional etch systems. With immersion or spray recipes at 30–40°C, a 7-day bath life after makeup and an explicit exclusion of aluminum-coexisting structures, it provides a stable, controllable W/TiW patterning solution for advanced packaging lines.

Introduction

ET-W Tungsten / TiW Etchant (ET-W) is developed by SEMPURION for Advanced packaging W/TiW metallization as a Etching / Developing product.Key advantage: W/TiW etching for advanced packaging metallization; cyanide-free alkaline chemistry with stable supply chain.. Benchmarked against Tianhong. Key features: Alkaline medium provides the optimum environment for dissolving tungsten as tungstate; cyanide-free etch system (avoids toxicity and waste-treatment burdens of traditional routes); stable supply chain. Typical process: Immersion with agitation or spray at 30–40°C (35°C recommended); 1–2 min for a 0.3 µm W layer, stop when cleared, then immediate DI overflow rinse ×3; use within 7 days of makeup (oxidizer activity decays); not for structures with coexisting aluminum (the product attacks Al).

Quick Specs

Benchmark
Tianhong
Application
Advanced packaging W/TiW metallization
Materials
Advanced packaging substrates

Features

Alkaline medium provides the optimum environment for dissolving tungsten as tungstate; cyanide-free etch system (avoids toxicity and waste-treatment burdens of traditional routes); stable supply chain

Process & Usage

Immersion with agitation or spray at 30–40°C (35°C recommended); 1–2 min for a 0.3 µm W layer, stop when cleared, then immediate DI overflow rinse ×3; use within 7 days of makeup (oxidizer activity decays); not for structures with coexisting aluminum (the product attacks Al)

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