GE-K1 Glass Etchant for TGV (Femtosecond-Laser + Hot Alkali Route)
Semiconductor & PackagingEtching / Developing

GE-K1

GE-K1 Glass Etchant for TGV (Femtosecond-Laser + Hot Alkali Route)

Through-glass-via etch by femtosecond-laser modification plus hot-alkali etching; >50:1 selectivity with near-zero etch of bulk glass and no toxic fluorine acids.

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Technical Description

GE-K1 is a glass etchant from Shengpu Chemical that forms through-glass vias by femtosecond-laser modification followed by selective hot-alkali etching, benchmarking RENA's alkaline route. Because the etchant removes laser-modified zones more than 50x faster than bulk glass, no sidewall protection is needed and the process deliberately avoids highly toxic fluorine acids. Immersion at 110±5°C with dilute organic-acid neutralization and DI rinsing yields low-taper (<1°) vias with low sodium content for TGV glass-substrate manufacturing in advanced packaging lines.

Introduction

GE-K1 Glass Etchant for TGV (Femtosecond-Laser + Hot Alkali Route) (GE-K1) is developed by SEMPURION for TGV glass substrates as a Etching / Developing product.Key advantage: Through-glass-via etch by femtosecond-laser modification plus hot-alkali etching; >50:1 selectivity with near-zero etch of bulk glass and no toxic fluorine acids.. Benchmarked against RENA alkaline etching. Key features: Femtosecond-laser-modified + hot-alkali (110°C) selective etch route — etch rate on laser-modified zones far exceeds bulk glass (selectivity >50:1) with bulk glass nearly untouched; no sidewall protection needed; explicitly no highly toxic fluorine acids; safe, controllable hot-alkali etching; low taper angle (<1°, benchmarked to RENA); meets low-sodium requirements. Typical process: Effective alkali approx. 40%; immersion 10–60 min at 110±5°C (etch rate 0.1–0.5 µm/min depending on laser modification damage; calibrate against the customer's laser parameters); remove and rinse with hot water, neutralize 1–2 min in dilute organic acid, DI rinse ×3, then proceed to post-TGV cleaning; do not use aluminum, glass or ceramic containers.

Quick Specs

Benchmark
RENA alkaline etching
Application
TGV glass substrates
Materials
Glass substrates

Features

Femtosecond-laser-modified + hot-alkali (110°C) selective etch route — etch rate on laser-modified zones far exceeds bulk glass (selectivity >50:1) with bulk glass nearly untouched; no sidewall protection needed; explicitly no highly toxic fluorine acids; safe, controllable hot-alkali etching; low taper angle (<1°, benchmarked to RENA); meets low-sodium requirements

Process & Usage

Effective alkali approx. 40%; immersion 10–60 min at 110±5°C (etch rate 0.1–0.5 µm/min depending on laser modification damage; calibrate against the customer's laser parameters); remove and rinse with hot water, neutralize 1–2 min in dilute organic acid, DI rinse ×3, then proceed to post-TGV cleaning; do not use aluminum, glass or ceramic containers

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