ET-Mo Molybdenum Etchant
Semiconductor & PackagingEtching / Developing

ET-Mo

ET-Mo Molybdenum Etchant

Etchant for next-generation Mo interconnect metal, positioning for future process nodes; classic PAN chemistry plus an Al-compatible option.

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Technical Description

ET-Mo is a molybdenum etchant from Shengpu Chemical for advanced packaging and wafer Mo metallization, targeting next-generation interconnect metal adoption. Benchmarked against Kanto Chemical, the main system follows the classic PAN route — oxidation followed by acid dissolution into soluble molybdenum salts with controlled side etch — while a mild oxidizing variant compatible with aluminum handles Mo/Al/Mo three-layer stacks that the main system would attack. Immersion recipes with clear stop criteria and thorough rinsing give controlled, repeatable Mo patterning for advanced packaging lines.

Introduction

ET-Mo Molybdenum Etchant (ET-Mo) is developed by SEMPURION for Advanced packaging / wafer Mo metallization as a Etching / Developing product.Key advantage: Etchant for next-generation Mo interconnect metal, positioning for future process nodes; classic PAN chemistry plus an Al-compatible option.. Benchmarked against Kanto Chemical. Key features: Classic PAN molybdenum etch route — oxidizer converts Mo to soluble molybdate salts via acid dissolution with controlled side etch; an additional mild oxidizing system compatible with aluminum covers Mo/Al/Mo three-layer stacks (the main system attacks Al, so stacked structures must use the compatible type). Typical process: Main system: immersion 30–40°C with agitation 1–2 min (0.5 µm Mo), stop when cleared, DI overflow rinse ×3, then 50°C hot-water quick rinse to remove acid residue. Mild alternative: immersion 30°C for 3–10 min with agitation.

Quick Specs

Benchmark
Kanto Chemical
Application
Advanced packaging / wafer Mo metallization
Materials
Advanced packaging / wafer

Features

Classic PAN molybdenum etch route — oxidizer converts Mo to soluble molybdate salts via acid dissolution with controlled side etch; an additional mild oxidizing system compatible with aluminum covers Mo/Al/Mo three-layer stacks (the main system attacks Al, so stacked structures must use the compatible type)

Process & Usage

Main system: immersion 30–40°C with agitation 1–2 min (0.5 µm Mo), stop when cleared, DI overflow rinse ×3, then 50°C hot-water quick rinse to remove acid residue. Mild alternative: immersion 30°C for 3–10 min with agitation

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