ET-Ru
ET-Ru Ruthenium Etchant (R&D)
Etchant for ruthenium, a candidate next-generation interconnect metal; formulation significantly suppresses escape of highly toxic volatile byproducts.
Technical Description
ET-Ru is a ruthenium etchant from Shengpu Chemical in the R&D validation stage, targeting Ru as a candidate next-generation interconnect metal beyond the 2 nm node. Benchmarked against Kanto Chemical's Ru etch R&D direction, the industry currently has no mature production-grade Ru etchant, so no production metrics are committed and etch rates await experimental calibration. The formulation is designed to significantly suppress the evolution of highly toxic volatile byproducts, and processing at 40°C in a fume hood with alkaline scrubbing of exhaust defines the safety envelope for this advanced packaging and wafer R&D application.
Introduction
ET-Ru Ruthenium Etchant (R&D) (ET-Ru) is developed by SEMPURION for Advanced packaging / wafer Ru metallization (R&D validation) as a Etching / Developing product.Key advantage: Etchant for ruthenium, a candidate next-generation interconnect metal; formulation significantly suppresses escape of highly toxic volatile byproducts.. Benchmarked against Kanto Chemical (Ru etching R&D direction). Key features: Significantly suppresses evolution of highly toxic volatile byproducts; no mature production-grade Ru etchant exists in the industry today — this product is in R&D validation (etch rate pending experimental calibration, no production metrics committed); technology positioning for next-generation interconnect metals (candidate beyond the 2 nm node). Typical process: Immersion at 40°C in a fume hood; 1–10 min for 10–50 nm Ru films; DI rinse ×3; exhaust gas absorbed by alkaline scrubber; spent bath collected as hazardous waste; protect from light during makeup and storage.
Quick Specs
Features
Significantly suppresses evolution of highly toxic volatile byproducts; no mature production-grade Ru etchant exists in the industry today — this product is in R&D validation (etch rate pending experimental calibration, no production metrics committed); technology positioning for next-generation interconnect metals (candidate beyond the 2 nm node)
Process & Usage
Immersion at 40°C in a fume hood; 1–10 min for 10–50 nm Ru films; DI rinse ×3; exhaust gas absorbed by alkaline scrubber; spent bath collected as hazardous waste; protect from light during makeup and storage
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