ET-Ti
ET-Ti High-Purity Titanium Etchant for Fine Lines
High-purity Ti etching for 1 µm fine lines with side etch below 0.3 µm; excellent selectivity to glass, SiO₂ and photoresist.
Technical Description
ET-Ti is a high-purity titanium etchant from Shengpu Chemical for seed-layer patterning in advanced packaging. Benchmarked against Kanto Chemical, its etch rate is tuned to 60–120 nm/min at 30°C to hold fine-line side etch within 0.3 µm on 0.5 µm films, with selectivity above 100:1 to SiO₂/glass and 50:1 to SiN and no photoresist attack. Applied by immersion or spray with an endpoint-potential stop, it delivers precise, repeatable Ti patterning for advanced packaging seed layers.
Introduction
ET-Ti High-Purity Titanium Etchant for Fine Lines (ET-Ti) is developed by SEMPURION for Advanced packaging seed layers as a Etching / Developing product.Key advantage: High-purity Ti etching for 1 µm fine lines with side etch below 0.3 µm; excellent selectivity to glass, SiO₂ and photoresist.. Benchmarked against Kanto Chemical. Key features: Etch rate carefully tuned (60–120 nm/min at 30°C) to control fine-line side etch (≤0.3 µm for 0.5 µm films); selectivity >100:1 to SiO₂/glass and >50:1 to SiN; photoresist not attacked. Typical process: Immersion/spray etching at 25–35°C (30°C recommended, temperature-controlled); 4–8 min for a 500 nm Ti film, stop at endpoint potential jump (over-etch ≤10%); DI overflow rinse, quick dilute-acid wash, then DI rinse ×3.
Quick Specs
Features
Etch rate carefully tuned (60–120 nm/min at 30°C) to control fine-line side etch (≤0.3 µm for 0.5 µm films); selectivity >100:1 to SiO₂/glass and >50:1 to SiN; photoresist not attacked
Process & Usage
Immersion/spray etching at 25–35°C (30°C recommended, temperature-controlled); 4–8 min for a 500 nm Ti film, stop at endpoint potential jump (over-etch ≤10%); DI overflow rinse, quick dilute-acid wash, then DI rinse ×3
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