SE-Cu1 Cu/Ti Seed-Layer Selective Etchant
Semiconductor & PackagingEtching / Developing

SE-Cu1

SE-Cu1 Cu/Ti Seed-Layer Selective Etchant

Selective etching of Cu/Ti seed layers for TGV/RDL patterning with endpoint control and near-zero attack on the glass substrate.

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Technical Description

SE-Cu1 is a selective etchant from Shengpu Chemical that removes Cu/Ti seed layers from non-wiring areas on glass substrates after sputtering, for TGV and RDL patterning. Benchmarked against industry-standard Cu/Ti selective etchants, its oxidation-plus-complexation system (oxidizer and inorganic acid working together, migrated from metal stripping technology) is engineered for side-etch control and zero damage to the glass substrate, with a controllable etch endpoint. It serves precision patterning needs in semiconductor manufacturing and advanced packaging lines.

Introduction

SE-Cu1 Cu/Ti Seed-Layer Selective Etchant (SE-Cu1) is developed by SEMPURION for Glass-substrate seed layers as a Etching / Developing product.Key advantage: Selective etching of Cu/Ti seed layers for TGV/RDL patterning with endpoint control and near-zero attack on the glass substrate.. Benchmarked against Industry-standard Cu/Ti seed-layer selective etchants. Key features: Oxidation-plus-complexation selective etch system (oxidizer synergized with inorganic acid, migrated from metal stripping/deplating technology); removes Cu/Ti from non-wiring areas after seed sputtering with side-etch control and zero glass-substrate damage as design priorities; controllable etch endpoint. Typical process: Oxidation-plus-complexation selective etching with controllable endpoint and controlled side etch; rinse.

Quick Specs

Benchmark
Industry-standard Cu/Ti seed-layer selective etchants
Application
Glass-substrate seed layers
Materials
Glass-substrate seed layers

Features

Oxidation-plus-complexation selective etch system (oxidizer synergized with inorganic acid, migrated from metal stripping/deplating technology); removes Cu/Ti from non-wiring areas after seed sputtering with side-etch control and zero glass-substrate damage as design priorities; controllable etch endpoint

Process & Usage

Oxidation-plus-complexation selective etching with controllable endpoint and controlled side etch; rinse

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Songshan Lake, Dongguan, Guangdong, China

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