SE-UBM
SE-UBM UBM Seed-Layer Etch Kit (Cu + Ti Two-Bath System)
Complete UBM seed-layer etch kit — separate copper and titanium etchants for stepwise processing; near-zero glass loss.
Technical Description
SE-UBM is a two-bath UBM seed-layer etch kit from Shengpu Chemical (copper etchant plus titanium etchant) for advanced packaging UBM processing on glass substrates. Benchmarked against Zhipu, the mutually exclusive chemistries require stepwise etching — copper via oxidation-plus-acid dissolution and titanium via an oxidizer with trace fluorine accelerant that avoids highly toxic fluorine acids — while the glass substrate shows near-zero weight loss. With stepwise immersion or spray recipes, endpoint-stopped titanium clearing and mandatory inter-step DI rinsing, it delivers precise, substrate-safe patterning for advanced packaging lines.
Introduction
SE-UBM UBM Seed-Layer Etch Kit (Cu + Ti Two-Bath System) (SE-UBM) is developed by SEMPURION for Advanced packaging UBM (under-bump metallization) as a Etching / Developing product.Key advantage: Complete UBM seed-layer etch kit — separate copper and titanium etchants for stepwise processing; near-zero glass loss.. Benchmarked against Zhipu. Key features: Two-bath stepwise design (copper etchant + titanium etchant); copper runs an oxidation-plus-acid dissolution route, titanium an oxidizer-plus-trace-fluorine-accelerant route — the two chemistries are mutually exclusive and must be run stepwise; near-zero weight loss of glass substrate; titanium etchant avoids highly toxic fluorine acids, using only trace fluorine accelerants. Typical process: Cu etch: immersion/spray 30–40°C for 40–90 s (1 µm Cu), then immediate DI overflow rinse. Ti etch: immersion 30–40°C for 1–2 min (stop when Ti layer is cleared and glass shows), then DI rinse ×3. Baths must be rinsed clean with DI between the two steps.
Quick Specs
Features
Two-bath stepwise design (copper etchant + titanium etchant); copper runs an oxidation-plus-acid dissolution route, titanium an oxidizer-plus-trace-fluorine-accelerant route — the two chemistries are mutually exclusive and must be run stepwise; near-zero weight loss of glass substrate; titanium etchant avoids highly toxic fluorine acids, using only trace fluorine accelerants
Process & Usage
Cu etch: immersion/spray 30–40°C for 40–90 s (1 µm Cu), then immediate DI overflow rinse. Ti etch: immersion 30–40°C for 1–2 min (stop when Ti layer is cleared and glass shows), then DI rinse ×3. Baths must be rinsed clean with DI between the two steps
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- Phone
- +86 769-82786068
- sales@sempurion.com
- Website
- www.sempurion.com
- Address
- Songshan Lake, Dongguan, Guangdong, China