Semiconductor & Advanced Packaging Solutions
Electronic-grade chemistries covering carrier cleaning, wafer processing, TGV glass substrates and metal etching for semiconductor and advanced packaging.
Process Chain
Carrier & FOUP Cleaning
FOUP/FOSB and mask boxes accumulate particles, organics and ionic contamination during repeated use. Match neutral, mild-alkaline or high-alkaline cleaners to the carrier material and soil type.
Dedicated pre-cleaner for particle removal on FOUP/FOSB: concentrate diluted 1:4, neutral pH 6.5–7.5, chemical clean at 50–65 °C for 3–8 min, spray-safe with <5 mm foam
Flagship of the SP-Clear series: primary product for organic contamination and VOC removal on FOUP/FOSB — 1:4 dilution, pH 8.5–9.5, clean at 55–75 °C for 5–10 min; HSP verified RED=0.59
Dedicated cleaner for high-temperature PEI ESD FOUP: 1:4 dilution, pH 9.5–10.5, clean at 70–90 °C for 5–10 min (not for PC ESD material)
Strong-alkali cleaning for PFA/PTFE/Teflon wafer carriers and cleaning baskets: 1:9 dilution, pH 12.8–13.2, clean at 70–100 °C for 5–15 min — spray, immersion or ultrasonic
Neutral cleaner for mask and reticle storage boxes: 1:4 dilution (UPW recommended), pH 6.5–7.5, clean at 40–60 °C for 5–10 min; GLDA+EDTA dual chelation for Haze control
Wafer Process Cleaning
Covers blue-film residue removal after dicing, post-CMP cleaning, dry-etch residue removal, EBR, post-plating and post-thinning cleaning, matched to residue type.
One-step removal of blue/UV tape adhesive residue after wafer dicing, balancing stripping power with wafer/chip safety.
Removes particles and metallic residues after CMP; technology extension of the SP-Clear series.
Efficient removal of polymer residues after dry etch and ashing; water-based with high closed-cup flash point for safe operation at 70°C.
Removes edge bead residue after lithography; electronic-grade purity for yield protection.
Low-foam mild-alkaline cleaner removing residual plating solution and particles after bump plating.
Removes adhesive residue left after temporary bonding/de-bonding; water-based with a closed-cup flash point above 60°C for safe heated operation.
Removes particles and metallic residues after back-grinding/thinning; improved SC1-type formulation.
TGV Glass Substrate
One-stop for TGV glass: via etch, in-via cleaning, surface modification and seed-layer etch, compatible with laser-modified thermal-alkaline and spray/ultrasonic processes.
Through-glass-via etch by femtosecond-laser modification plus hot-alkali etching; >50:1 selectivity with near-zero etch of bulk glass and no toxic fluorine acids.
Cleans inside high-aspect-ratio through-glass vias; surface tension below 30 mN/m lets the bath penetrate straight to the via bottom.
Post-etch surface and post-CMP cleaning compatible with fluorine-containing etch residues on TGV glass substrates.
Modifies glass before TGV seed-layer deposition to multiply copper adhesion; 5B tape-peel rating and 240 h 85°C/85%RH reliability demonstrated.
Selective etching of Cu/Ti seed layers for TGV/RDL patterning with endpoint control and near-zero attack on the glass substrate.
Metal Etch & Develop
Etchants for Ti/Mo/Ru/W interconnect metals plus RDL developer with high selectivity, low undercut and corrosion protection for fine geometries.
High-purity Ti etching for 1 µm fine lines with side etch below 0.3 µm; excellent selectivity to glass, SiO₂ and photoresist.
Etchant for next-generation Mo interconnect metal, positioning for future process nodes; classic PAN chemistry plus an Al-compatible option.
Etchant for ruthenium, a candidate next-generation interconnect metal; formulation significantly suppresses escape of highly toxic volatile byproducts.
W/TiW etching for advanced packaging metallization; cyanide-free alkaline chemistry with stable supply chain.
Complete UBM seed-layer etch kit — separate copper and titanium etchants for stepwise processing; near-zero glass loss.
Packaging-grade standard developer system for RDL processes; electronic-grade purity with no metal ions (MIF).
Frequently Asked Questions
The questions customers ask most during selection — each links to the technical answer and matching products.
How to select cleaning chemistry for FOUP / FOSB carriers
Select by carrier material (PC ESD / CBM ESD / PEI ESD differ in temperature and alkali tolerance), then by contaminant (particles / organics / ions / resist residue). SP-Clear covers this with 5 grades.
Read answer →How to clean post-CMP wafers without attacking Cu/W interconnect?
The key is a mild-alkaline window plus metal-ion capture — overly strong alkali or overly strong complexing attacks copper. PCMP-100 runs at pH 9.0–9.8 with acceptance targets of <0.1 particles/cm² (≥0.16 μm) and Na/Cu/Fe < 10 ppb.
Read answer →Domestic alternative for post-thinning wafer cleaning
TW-100, an SC1-improved system, suits post-thinning cleaning: two-component 5X concentrate at A:B:DI = 1:1:5 mixed fresh, 40–60 °C for 5–10 min, with targets of <100 particles/wafer (≥0.3 μm) and Fe/Cu/Zn < 10 ppb.
Read answer →Which chemistry for TGV via etching — fluorine or hot-alkali route?
For the femtosecond-laser-modification + hot-alkali selective etch route, GE-K1 runs at 110±5 °C: the modified zone is selectively removed into a via while bulk glass is barely etched, and it avoids highly toxic hydrofluoric acid.
Read answer →Need technical support or a sample?
Tell us your substrate, contamination and process conditions — our process engineers will recommend a grade and arrange sample validation.
- Phone
- +86 769-82786068
- sales@sempurion.com
- Website
- www.sempurion.com
- Address
- Songshan Lake, Dongguan, Guangdong, China